| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents a current concentration in a drain edge and is excellent in resistance over a static discharge. SOLUTION: A protection element 1 has a structure in which a vertical type bipolar transistor Q1 and a parasitic bipolar transistor Q2 are formed in the part of the device of a MOS structure. An n drift region 5 is formed between an n<SP>+</SP>drain region 3 and a channel region 4 directly under a gate. A p<SP>+</SP>base contact region 7 is formed adjacent to an n<SP>+</SP>source region 6. Since the vertical type transistor Q1 is formed in the source side so that the Hall current generated at the time of the static discharge is passed to the vertical transistor Q1, the current concentration can be alleviated in the base side end of the n<SP>+</SP>drain region. COPYRIGHT: (C)2006,JPO&NCIPI
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