SURFACE TREATMENT APPARATUS, THIN-FILM-FORMING APPARATUS, SURFACE TREATMENT METHOD AND THIN-FILM-FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a thin-film-forming apparatus which eliminates an effect of Cl atoms and does not form an impurity layer without needing a post-treatment step. SOLUTION: This thin-film-forming method comprises the steps of: stopping the supply of Cl2gas 21 after having formed the thin film of Cu, and simultaneously supplying He gas 22 from a gas nozzle 18; turning a bias power supply 31 on to apply a biased power to a substrate 3; introducing He ions into the periphery of the substrate 3 to which the biased power is applied; and thereby applying energy due to ion bombardment onto the substrate 3 while keeping the substrate 3 at a low temperature to remove Cl atoms remaining in the Cu thin film. The thin-film-forming apparatus thus eliminates the effect of Cl atoms and does not form the impurity layer. COPYRIGHT: (C)2006,JPO&NCIPI