| 摘要 |
The present invention includes a phase-change memory cell device and method that includes a memory cell, a selection device, a contact, and a sublithographic pillar. The contact is coupled to the selection device. The phase-change pillar is coupled to the contact. The sublithographic pillar is coupled to the contact. The sublithographic pillar is surrounded by insulating material thereby defining sublithographic lateral dimensions of the sublithographic pillar. There is also sublithographic contact between the sublithographic pillar and the contact.
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