| 摘要 |
We describe a nonvolatile memory device with a wired-OR structure and method of driving the same that reduces peak current during the wired-OR operation. The nonvolatile semiconductor memory device includes a memory cell array including a plurality of bitlines and a plurality of memory cells to store data. A plurality of page buffers buffer main latch data responsive to the bitlines. An internal output line operates in an output drive voltage responsive to the main latch data. A global output line transfers a data bit responsive to the internal output line. An output switch circuit electrically connects the global output line to the internal output line during a wired-OR operation. And a data line control circuit charges the global output line with a charge current after discharging the same during the wired-OR operation.
|
