发明名称 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURE THEREOF, AND THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURE THEREOF, AND LIQUID CRYSTAL DISPLAY DEVICE AND ORGANIC EL DISPLAY DEVICE USING SAID THIN FILM TRANSISTOR, AND TRANSPARENT ELECTROCO
摘要 <p>A method, characterized in that it comprises a step of forming a first electrode (a source or the like) of a thin film transistor on a transparent insulating substrate using an Al alloy as a first electrode, a step of forming an insulating film over the first electrode and the substrate, a step of forming a contact hole in the insulating film and a step of forming a second electrode (a transparent electrode) on the insulating film and electrically connecting the second electrode with the first electrode directly via the above contact hole, wherein the above Al alloy comprises Ni and one or more types of metal selected from among Mo, Nb, W and Zr. The above method can be suitably used for reducing the contact resistance in the contacting region of a transparent electrode as a second electrode with a first electrode (gate, source, drain) and for inhibiting the galvanic cell reaction.</p>
申请公布号 WO2006080116(A1) 申请公布日期 2006.08.03
申请号 WO2005JP19417 申请日期 2005.10.21
申请人 IDEMITSU KOSAN CO., LTD.;INOUE, KAZUYOSHI;MATSUBARA, MASATO 发明人 INOUE, KAZUYOSHI;MATSUBARA, MASATO
分类号 H01L29/417;G02F1/1368;G09F9/00;H01L29/423;H01L29/49;H01L29/786 主分类号 H01L29/417
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