| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing device capable of suppressing the threshold-voltage fluctuation of an FET for a reset, a manufacturing method for the solid-state image sensing device and a charge-storage preventive structure. SOLUTION: Charges transferred to a diffusion layer FD are read through a gate for the FET (TR) for reading a signal, and the diffusion layer FD is reset by the FET (Q<SB>R</SB>) for the reset after charges are read. Since a gate electrode for the FET (Q<SB>R</SB>) for the reset is connected to a first conductor R<SB>1</SB>, charges stored in an insulating layer 6 in the vicinity of the gate electrode previously flow through the first conductor R<SB>1</SB>for absorbing charges from the gate electrode in a finished product after a cutting. Since the gate electrode and the first conductor R<SB>1</SB>are cut, a connection trace RG' is left. The charges are stored in the insulating layer 6 during a plasma treatment, but a potential fluctuation just under the insulating layer 6 is suppressed because the charges are absorbed to the first conductor R<SB>1</SB>. COPYRIGHT: (C)2006,JPO&NCIPI |
