| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a semiconductor device excellent in reliability by suppressing the generation of a short circuit fault. SOLUTION: The semiconductor device is processed by forming an oxide film 30 for insulating in which a trench 15 is filled up above an n<SP>+</SP>source region 12 and forming a source electrode 221 by performing the ohmic contact of a metal or a silicide film with the n<SP>+</SP>source region 12 only in an opening part of the insulating film 30. Moreover, the distance (d) of the end of a source wiring 22 and the end of a source region 12 in the longitudinal direction of a unit is double or more than double the thickness Tsw of the source wiring 22. Therefore, a short circuit between the source and a gate is prevented, a cost is reduced by improvement in yield, and a cooling system and a system size can be miniaturized. COPYRIGHT: (C)2006,JPO&NCIPI
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