| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein the joint reliability between a bump provided on an IC chip and a wiring pattern formed on a substrate is sufficiently secured. <P>SOLUTION: The method is used to mount an IC chip 20 having a bump 22 on its circuit surface onto a film substrate 10 with a wiring pattern 12 from the inside of a bonding area to the outside thereof, and to manufacture a semiconductor device 100. The method includes steps of: applying an NCP resin 30 on the bonding area of the film substrate 10; and pressing the circuit surface of the IC chip 20 onto the bonding area where the NCP resin 30 is applied, and joining the bump 22 of the IC chip 20 with the wiring pattern 12 of the film substrate 10. In the joint step to join the bump 22 with the wiring pattern 12, the joint temperature is set at 200°C or more, namely, the heat resistance temperature value or less of the semiconductor device 100, and the joint load is set at 25 kgf/mm<SP>2</SP>or more, namely, the pressure-resistance load value or less of the semiconductor device 100. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
