| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for peeling off not only a layer to be peeled with a small area, but also a layer to be peeled with a large area while giving a satisfactory yield without damaging the layer to be peeled. SOLUTION: The peeling method includes a process for forming a first layer containing a first material on a substrate; a process for forming a second layer containing a second material on the first layer; a process for forming the layer to be peeled on the second layer; and a process for performing heat treatment or the irradiation of laser beams for separating the substrate from the layer to be peeled by using the compressive stress of a second layer. The first material is one or more selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, and Pt. The second material is a silicon oxide or silicon oxy-nitride. COPYRIGHT: (C)2006,JPO&NCIPI
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