发明名称 |
Multilayer stack with compensated resonant circuit |
摘要 |
A metallization structure in a multilayer stack, which is arranged at a distance from a ground electrode, is characterized in that the metallization structure has a capacitor electrode and a line that acts as a coil, where the capacitor electrode and the line are arranged in a common plane which lies parallel with the ground electrode at a distance h 1 , and in that formula (I) where w is the width of the line.
|
申请公布号 |
US2006171096(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050549883 |
申请日期 |
2005.09.16 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
MATTERS-KAMMERER MARION K. |
分类号 |
H01G2/22;H01F17/00;H03H7/01 |
主分类号 |
H01G2/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|