发明名称 Multilayer stack with compensated resonant circuit
摘要 A metallization structure in a multilayer stack, which is arranged at a distance from a ground electrode, is characterized in that the metallization structure has a capacitor electrode and a line that acts as a coil, where the capacitor electrode and the line are arranged in a common plane which lies parallel with the ground electrode at a distance h 1 , and in that formula (I) where w is the width of the line.
申请公布号 US2006171096(A1) 申请公布日期 2006.08.03
申请号 US20050549883 申请日期 2005.09.16
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 MATTERS-KAMMERER MARION K.
分类号 H01G2/22;H01F17/00;H03H7/01 主分类号 H01G2/22
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