发明名称 |
Structure and method of integrating compound and elemental semiconductors for high-performace CMOS |
摘要 |
A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The first substrate is wafer bonded onto a monocrystalline Si substrate, such that the insulating layer bonds with the monocrystalline Si substrate. A semiconductor device includes a monocrystalline substrate, and a dielectric layer formed on the monocrystalline substrate. A semiconductor compound is formed on the dielectric layer and an elemental semiconductor material formed in proximity of the semiconductor compound and lattice-matched to the semiconductor compound.
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申请公布号 |
US2006172505(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050046912 |
申请日期 |
2005.01.31 |
申请人 |
KOESTER STEVEN J;SADANA DEVENDRA K;SHAHIDI GHAVAM G |
发明人 |
KOESTER STEVEN J.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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