| 摘要 |
A semiconductor device ( 102 ) that includes a drain extended PMOS transistor (CT 1 a) is provided, as well as fabrication methods ( 202 ) therefore. In forming the PMOS transistor, a drain ( 124 ) of the transistor is formed over a region ( 125 ) of a p-type upper epitaxial layer ( 106 ), where the region ( 125 ) of the p-type upper epitaxial layer ( 106 ) is sandwiched between a left P-WELL region ( 130 a) and a right P-WELL region ( 130 b) formed within the p-type upper epitaxial layer ( 106 ). The p-type upper epitaxial layer ( 106 ) is formed over a semiconductor body ( 104 ) that has an n-buried layer ( 108 ) formed therein. This arrangement serves to increase the breakdown voltage (BVdss) of the drain extended PMOS transistor.
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