发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL |
摘要 |
<p>A thin film transistor array panel is provided. The array panel includes a storage capacitance that is substantially uniform, and allows for a relatively large capacitance in a relatively small area. In some embodiments, the panel includes: a substrate; a plurality of semiconductor regions on the substrate, including a plurality of source and drain regions doped with a first impurity type and a dummy region doped with a second impurity type, and an intrinsic region having storage and channel regions; a gate insulating layer covering at least a portion of the semiconductor regions; a gate line including a gate electrode at least partially overlapping the channel region and formed on the gate insulating layer; a storage line including a storage electrode at least partially overlapping the storage region and formed on the gate insulating layer; a data line including a source electrode connected to the source region and formed on the gate insulating layer; a drain electrode connected to the drain region and the dummy region and formed on the gate insulating layer; and a pixel electrode connected to the drain electrode.</p> |
申请公布号 |
KR20060087739(A) |
申请公布日期 |
2006.08.03 |
申请号 |
KR20050008557 |
申请日期 |
2005.01.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON, KOOK CHUL;JOO, SOONG YONG;KIM, IL GON;PARK, TAE HYEONG |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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