发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress current consumption by making an external supply operate in the range of a low-voltage region lower than the range of a normal operation power supply voltage. <P>SOLUTION: The semiconductor device is provided with a boosting power supply circuit 1 comprising a charge pump composed of a single-stage capacitance element that generates an internal power supply voltage Vpp higher than an external power supply voltage Vdd fed from the outside by boosting and driving the external power supply voltage Vdd and comparing it with a reference voltage Vref; a counter rest circuit 7 that generates a discrimination signal/COUNT that discriminates the time, immediately after the charge of external power and a time after the lapse of a prescribed period of time, on the basis of an oscillation start signal REN that is generated, when the boosting power supply circuit 1 performs the boosting and driving; and a reference voltage generating circuit 2 that changes the reference voltage Vref fed to the boosting power supply circuit 1, immediately after the charge of the external power and after the lapse of the prescribed period of time, on the basis of the discrimination signal/COUNT from the counter reset circuit 7. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006203960(A) 申请公布日期 2006.08.03
申请号 JP20050009780 申请日期 2005.01.18
申请人 RENESAS TECHNOLOGY CORP 发明人 MITSUI KATSUKICHI
分类号 H02M3/07;G11C11/413;H01L21/822;H01L27/04;H02M3/00;H03K3/03;H03K17/06;H03K17/22;H03K19/00 主分类号 H02M3/07
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