Semiconductor device having a high carbon content strain inducing film and a method of manufacture therefor

摘要

The present invention provides a method for manufacturing a semiconductor device as well as a semiconductor device. The method, among other steps, may include forming a gate structure ( 230 ) over a substrate ( 210 ), and forming a strain inducing film ( 330, 520, 530 or 810 ) over the substrate ( 210 ) and proximate the gate structure ( 230 ), the strain inducing film ( 330, 520, 530 or 810 ) comprising a bis t-butylaminosilane (BTBAS) silicon nitride layer formed using ratio of bis t-butylaminosilane (BTBAS) to ammonia (NH₃) of 1:1 or greater.