| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compact MOSFET semiconductor device having low ON resistance also when it is used for a large chip. <P>SOLUTION: The semiconductor device includes a resin package 1; at least two main leads 2a, 2b, 2c that are integrated inside the resin package 1 and compose a chip mounting section 2d; a semiconductor chip 6 mounted to the chip mounting section 2d; and first and second surface leads 3, 4 connected to each electrode on the surface of the semiconductor chip. The semiconductor device includes a plurality of leads so that the total of the current path of the main leads 2a, 2b, 2c becomes broader in width or smaller in interval than that of the first and second surface leads 3, 4 outside the resin package. The resistance of the main lead can be reduced and ON resistance can be reduced efficiently. Further, ON resistance can be reduced effectively when increasing the size of a chip since the total of the lead width is increased to the maximum at a drain terminal requiring a decrease in resistance. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
