NON-VOLATILE MEMORY AND FABRICATING METHOD AND OPERATING METHOD THEREOF

摘要

A non-volatile memory is provided. A well is disposed in a substrate and a shallow well is disposed inside the well. At least two stack gate structures are disposed on the substrate. Drain regions are disposed in the shallow well outside the stack gate structures. An auxiliary gate layer is disposed on the substrate between the two stack gate structures. The auxiliary gate layer extends down passing through a portion of the substrate. A gate dielectric layer is disposed between the auxiliary gate layer and the substrate and between the auxiliary gate layer and the stack gate structures. A conductive plug is disposed on the substrate. The conductive plug extends downward to connect with the shallow well and the drain region therein.