ENHANCEMENT - DEPLETION FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURE
摘要
The invention relates to a transistor structure with both enhancement and depletion mode transistors. In order to allow good control over the manufacture of both transistors, a first Schottky layer (10) and a second Schottky layer (12) are used made of first and second semiconductor materials respectively. The first and second materials having band gaps of at least 0.5V. For an n-type transistor the second Schottky layer has a low conduction band discontinuity with the first Schottky layer. Both the first and the second Schottky layers are used as etch stops in the method for making the transistor. The transistor is preferably a HEMT.
申请公布号
WO2006033082(A3)
申请公布日期
2006.08.03
申请号
WO2005IB53134
申请日期
2005.09.22
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;BAUDET, PIERRE, M., M.;MAHER, HASSAN