Devices such as amplifiers are built on a heat sink having a perimeter wall surrounding active electronic devices. Surprisingly formation of wire bonds to such devices tends to be degraded if they have an aspect ratio greater than 2:1. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height.
申请公布号
US2006172465(A1)
申请公布日期
2006.08.03
申请号
US20050049246
申请日期
2005.02.02
申请人
BRENNAN JOHN M;FREUND JOSEPH M;GILBERT JEFFREY J;OSENBACH JOHN W;SAFAR HUGO F
发明人
BRENNAN JOHN M.;FREUND JOSEPH M.;GILBERT JEFFREY J.;OSENBACH JOHN W.;SAFAR HUGO F.