SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device and equipment for manufacturing same are provided with a semiconductor substrate (200) having a source region (210) and a drain/cathode common region (220); a gate (240) formed on the semiconductor substrate; a diode wherein a cathode is connected with a drain in the drain/cathode common region; and a bit line (260) connected with an anode (222) of the diode. Thus, a potential difference between a connecting hole (265) and a control gate (240) is reduced for data erasure, and short-circuit is eliminated in a region (245) between the connecting hole (265) and the control gate (240). As a result, the region between the connecting hole and the control gate is microminiaturized, and a nonvolatile memory wherein a memory cell is microminiaturized can be provided.