DUAL SILICIDE PROCESS TO IMPROVE DEVICE PERFORMANCE

摘要

A semiconducting structure and a method of forming thereof, includes a substrate having a p-type device region (20) and a n-type device region (10); a first-type silicide contact (30) to the n-type device region (10); the first-type silicide having a work function that is substantially aligned to the n-type device region conduction band; and a second-type silicide contact (35) to the p-type device region (20); the second-type silicide having a work function that is substantially aligned to the p-type device region valence band. The present invention also provides a semiconducting structure and a method of forming therefore, in which the silicide contact material and silicide contact processing conditions are selected to provide strain based device improvements in pFET and nFET devices.