Integrated memory e.g. dynamic RAM has checking unit to determine whether to invert data values to be stored in memory cells based on number of cells in high or low resistance state

摘要

The memory cells (5) connected to word lines (11) and bit lines (12), have a memory element with a non-reactive resistance. A checking unit determines whether to invert data values to be stored in the memory cells connected to respective ones of the word lines based on a number of cells that are programmed in the high-resistance state or low resistance state as a result of data values. An independent claim is also included for operating method of integrated memory.