发明名称 |
256 MEG DYNAMIC RANDOM ACCESS MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for sealing a solid state device in a design of a dynamic random access memory (DRAM) which is an integrated circuit memory. SOLUTION: The method is provided for sealing the solid state device in which a lead frame is connected to a joint pad. In the method, a tie bar serves as a holder for a lead finger under sealing treatment. It is preferable that a part of the lead frame forms a part of an electric circuit of the solid state device. Moreover it is preferable that the method includes a process for cutting the tie bar. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006203239(A) |
申请公布日期 |
2006.08.03 |
申请号 |
JP20060065515 |
申请日期 |
2006.03.10 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
KEETH BRENT;BUNKER LAYNE G;DERNER SCOTT J;TAYLOR RONALD L;MULLIN JOHN S;BEFFA RAYMOND J;ROSS FRANK F;KINSMAN LARRY D |
分类号 |
G11C11/401;H01L23/50;G11C5/02;G11C5/06;G11C11/407;G11C11/4074;G11C11/4076;G11C11/4097;G11C29/04;G11C29/14;H01L21/56;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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