发明名称 256 MEG DYNAMIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a method for sealing a solid state device in a design of a dynamic random access memory (DRAM) which is an integrated circuit memory. SOLUTION: The method is provided for sealing the solid state device in which a lead frame is connected to a joint pad. In the method, a tie bar serves as a holder for a lead finger under sealing treatment. It is preferable that a part of the lead frame forms a part of an electric circuit of the solid state device. Moreover it is preferable that the method includes a process for cutting the tie bar. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006203239(A) 申请公布日期 2006.08.03
申请号 JP20060065515 申请日期 2006.03.10
申请人 MICRON TECHNOLOGY INC 发明人 KEETH BRENT;BUNKER LAYNE G;DERNER SCOTT J;TAYLOR RONALD L;MULLIN JOHN S;BEFFA RAYMOND J;ROSS FRANK F;KINSMAN LARRY D
分类号 G11C11/401;H01L23/50;G11C5/02;G11C5/06;G11C11/407;G11C11/4074;G11C11/4076;G11C11/4097;G11C29/04;G11C29/14;H01L21/56;H01L21/8242;H01L27/108 主分类号 G11C11/401
代理机构 代理人
主权项
地址