| 摘要 |
PROBLEM TO BE SOLVED: To increase the reliability of a semiconductor device including a salicide film. SOLUTION: A process of protecting an oxide film to prevent scattering of the oxide film on a silicon substrate is performed (S10) prior to a process (S30) of forming the salicide film. Then a process of cleaning a silicon substrate surface by dry etching is carried out (S20). Then the salicide film is formed (S30). COPYRIGHT: (C)2006,JPO&NCIPI
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