| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS-type field effect transistor for greatly improving the mobility of the electrons and positive holes of an nMOS and a pMOS and increasing speed and reducing power consumption by giving a larger tensile strain than that of a conventional structure laterally to a strain Si channel without increasing the Ge composition of a relaxation SiGe layer. SOLUTION: The method for manufacturing the MOS-type field effect transistor comprises a process for forming a gate electrode 3 on a substrate surface having a compound layer 2 with a lattice constant that differs from that of silicon and a silicon layer 1 via an insulating film; a process for forming a sidewall 16 on the sidewall of the gate electrode 3; a process for exposing the sidewall of the compound layer 2; and a process for forming the silicon film 1 on the sidewall of the compound by lattice matching. COPYRIGHT: (C)2006,JPO&NCIPI
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