| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of which characteristic is not changed even if it is given by light irradiation, and to provide its manufacturing method. SOLUTION: The semiconductor device is provided with a semiconductor layer 10, an insulating gate field effect transistor 20 provided in the semiconductor layer 10, an etching stopper film 32 provided above the insulating gate field effect transistor 20, and an interlayer insulating layer 34 provided above the etching stopper layer 32. The hydrogen content of the etching stopper film 32 is 6.00% or less. COPYRIGHT: (C)2006,JPO&NCIPI
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