| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having improved element characteristics by suppressing the deposition of impurities from a silicon oxide film (reflow film) for flattening that covers the surface, enhances uniformity in a sensitivity ratio, improves a sensitivity level or prevents deterioration in characteristics, and prevents variations in a threshold voltage at a photoelectric conversion section in a contact section. SOLUTION: The semiconductor device has: a wiring takeout terminal including: a photoelectric conversion section formed on the surface of a semiconductor substrate, and the surface of the semiconductor substrate is covered with a reflow film and a protective film formed on the upper layer of the reflow film. The protective film contains a final protective film and a lower-layer protective film formed on the lower layer of the final protective film. The surface of the reflow film is covered with a lower-layer protective film made of an insulating film film-formed by a non-plasma process, and the wiring take-out terminal is formed on the upper layer of the lower-layer protective film. COPYRIGHT: (C)2006,JPO&NCIPI
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