| 摘要 |
In a semiconductor device according to the present invention, the power source voltage Vdd 1 of a core transistor Tr 1, the power source voltage Vdd 2 of an I/O transistor Tr 2, and the power source voltage Vdd 3 of an I/O transistor Tr 3 satisfy Vdd 1 <Vdd 2 <Vdd 3. In a method for fabricating the semiconductor device, each of the respective gate insulating films of the I/O transistors Tr 2 and Tr 3 is formed in the same step to have the same thickness. Each of the respective SD extension regions of the core transistor Tr 1 and the I/O transistor Tr 2 is formed at the same dose.
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