| 摘要 |
An electron beam lithography apparatus includes a control device in which, for each column stripe in each drawing time of multiple drawing, optional conditions of dividing a pattern to be drawn on the sample can be set; and a time obtained by dividing a total irradiation time by the number of total drawing times is set to an electron beam-irradiation time. Further, the control device controls a deflection device so as to deflect the electron beam in accordance with the set conditions of pattern-division and the set electron beam-irradiation time.
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