| 摘要 |
A multi-layered structure in which a p-3C-SiC layer 102 is formed above a p-Si substrate 101 is formed, above which an I-GaN layer (channel layer) 103 , an n-AlGaN layer (barrier layer) 104 are formed. A source electrode 201 , a drain electrode 202 , and a gate electrode 203 are formed above the n-AlGaN layer 104 . The source electrode 201 and the drain electrode 202 form an ohmic contact with the n-AlGaN layer 104 . The gate electrode 203 forms a Schottky junction with the n-AlGaN layer 104.
|
