发明名称 256 MEG DYNAMIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To solve the problem that there is an adverse influence such as noise when maximum power is not necessary if a voltage pump of a size enough to supply necessary power is arranged. SOLUTION: A voltage pump for the dynamic random access memory is provided with a variable pump for supplying power at a variable level in response to a clock signal and an enable signal generated by the dynamic random access memory, an oscillator for generating the clock signal, and a regulator for generating a first signal to control the oscillator means. The variable pump includes a plurality of first independent pump circuits, and a plurality of second independent pump circuits. Each pump includes two substantially similar pump parts cooeperatively operated in response to the clock signal. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006202480(A) 申请公布日期 2006.08.03
申请号 JP20060062155 申请日期 2006.03.08
申请人 MICRON TECHNOLOGY INC 发明人 KEETH BRENT;BUNKER LAYNE G;DERNER SCOTT J;TAYLOR RONALD L;MULLIN JOHN S;BEFFA RAYMOND J;ROSS FRANK F;KINSMAN LARRY D
分类号 G11C11/401;G11C11/407;G11C5/02;G11C5/06;G11C11/4074;G11C11/4076;G11C11/4097;G11C29/04;G11C29/14;H01L21/8242;H01L27/108 主分类号 G11C11/401
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