发明名称 |
Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing |
摘要 |
An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
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申请公布号 |
US2006171083(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050048406 |
申请日期 |
2005.02.01 |
申请人 |
LEE WEN-YAUNG;LI JINSHAN;MAURI DANIELE;NISHIOKA KOICHI;TAJIMA YASUNARI |
发明人 |
LEE WEN-YAUNG;LI JINSHAN;MAURI DANIELE;NISHIOKA KOICHI;TAJIMA YASUNARI |
分类号 |
G11B5/33;G11B5/127 |
主分类号 |
G11B5/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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