发明名称 |
NON-VOLATILE MEMORY STRUCTURE AND METHOD OF FABRICATING NON-VOLATILE MEMORY |
摘要 |
A method of fabricating a non-volatile memory is described. A substrate having a tunneling layer and a floating gate layer thereon is provided. A mask layer is formed on the floating gate. The mask layer has openings that expose a portion of the floating gate layer. Then, a portion of the floating gate layer is removed from the openings to form sunken regions on the surface of the floating gate layer. An inter-gate dielectric layer is formed on the floating gate layer. A control gate layer is formed on the inter-gate dielectric layer. After that, the mask layer and the floating gate layer under the mask layer are removed to form another opening. A select gate layer is formed inside the opening.
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申请公布号 |
US2006172491(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050162497 |
申请日期 |
2005.09.13 |
申请人 |
CHEN TSUNG-LUNG;KUO HUI-HUNG;HSU CHENG-YUAN;HUNG CHIH-WEI |
发明人 |
CHEN TSUNG-LUNG;KUO HUI-HUNG;HSU CHENG-YUAN;HUNG CHIH-WEI |
分类号 |
H01L21/336;H01L21/3205 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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