发明名称 |
STRUCTURE AND METHOD FOR MANUFACTURING PLANAR STRAINED Si/SiGe SUBSTRATE WITH MULTIPLE ORIENTATIONS AND DIFFERENT STRESS LEVELS |
摘要 |
The present invention provides a method of forming a semiconducting substrate including the steps of providing an initial structure having first device region comprising a first orientation material and a second device region having a second orientation material; forming a first concentration of lattice modifying material atop the first orientation material; forming a second concentration of the lattice modifying material atop the second orientation material; intermixing the first concentration of lattice modifying material with the first orientation material to produce a first lattice dimension surface and the second concentration of lattice modifying material the second orientation material to produce a second lattice dimension surface; and forming a first strained semiconducting layer atop the first lattice dimension surface and a second strained semiconducting layer atop the second lattice dimension surface.
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申请公布号 |
US2006172495(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20050905978 |
申请日期 |
2005.01.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;DORIS BRUCE B.;OLDIGES PHILIP J.;IOENG MEIKEL;YANG MIN;CHEN HUAJIE |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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