发明名称 High density bitline selection apparatus for semiconductor memory devices
摘要 A bitline selection apparatus for a semiconductor memory device includes a first local bitline pair and a second local bitline pair selectively coupled to a global bitline pair, each of the first and second local bitline pairs including a true bitline and a complementary bitline. Each of the true bitlines is selectively coupled to a common true node through an n-type pass device and a p-type pass device in parallel therewith, and each of the complementary bitlines is selectively coupled to a common complementary node through an n-type pass device and a p-type pass device in parallel therewith.
申请公布号 US2006171215(A1) 申请公布日期 2006.08.03
申请号 US20050046101 申请日期 2005.01.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAWSON JAMES W.;PLASS DONALD W.;REYER KENNETH J.
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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