MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that can form a silicon-germanium layer with high germanium concentration. SOLUTION: The manufacturing method has the steps of forming a laminated structure that contains a layer 15 including silicon and oxygen and a silicon-germanium layer 13a, wherein the layer including silicon and oxygen is located between the silicon-germanium layer and a substrate 11; and reducing the film thickness of the silicon-germanium layer by heat-treating the silicon-germanium layer in an oxidizing atmosphere for oxidization and forming a silicon dioxide layer 16a at the top of the silicon-germanium layer where little germanium remains, thus increasing the germanium concentration on the silicon-germanium layer. COPYRIGHT: (C)2006,JPO&NCIPI