Wet etching the edge and bevel of a silicon wafer

摘要

A method and apparatus to selectively etch layers of various materials from the edge and bevel areas of the active side of a silicon wafer, as well as from the inactive side of a wafer are disclosed. The width of the etched edge generally varies from about 0.5 to about 5 mm and however the etching may be determined by the geometry of the supporting chuck and the surface tension of the etching medium.