PULSE THERMAL PROCESSING OF FUNCTIONAL MATERIALS USING DIRECTED PLASMA ARC
摘要
A method of thermally processing a material includes the steps of providing an article having a surface film disposed on a substrate, and exposing the thin film to at least one incident pulse of infrared comprising radiation at a power density of at least 0.1 kW/cm<SUP>2</SUP> emitted from a directed plasma arc to thermally process the thin film. The at least one pulse has a duration of no more than 10 s. The method provides a radiation intensity and spectrum of radiation capable of heating the surface film to the desired temperature while allowing the substrate to remain at a lower temperature. This feature permits use of substrates that generally are not high temperature tolerant, such as certain polymer substrates.
申请公布号
WO2006015328(A3)
申请公布日期
2006.08.03
申请号
WO2005US27301
申请日期
2005.08.01
申请人
UT-BATTELLE, LLC.;OTT, RONALD, D.;BLUE, CRAIG, A.;DUDNEY, NANCY, J.;HARPER, DAVID, C.
发明人
OTT, RONALD, D.;BLUE, CRAIG, A.;DUDNEY, NANCY, J.;HARPER, DAVID, C.