METHOD OF PRODUCING A SILICON OXIDE-BASED MATERIAL WITH A LOW DIELECTRIC CONSTANT

摘要

The invention relates to a method of producing a material (60) with a low dielectric constant, comprising a step consisting in forming cavities (66) in the silicon dioxide with the implantation of a rare gas other than helium or neon. The invention also relates to a component comprising metallic tracks and regions separating same, said regions containing silicon dioxide having a low dielectric constant and comprising cavities (66) which are formed with the implantation of a rare gas other than helium or neon at an implantation dose of greater than 10<SUP>16</SUP> atoms/cm<SUP>2</SUP>.