Nonvolatile semiconductor memory device which uses some memory blocks in multilevel memory as binary memory blocks

摘要

A nonvolatile semiconductor memory device includes a memory cell array, interface, and write circuit. The write circuit can selectively write data in the memory cell array by first write procedures or second write procedures in accordance with a data write command input to the interface. When a data write command by the first write procedures is input from the interface, the write circuit executes the command when flag data has a first value and does not execute the command when the flag data has a second value.