SEMICONDUCTOR LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device (100) with a mesa structure wherein a light-absorbing layer (6), an avalanche multiplication layer (4) and an electric-field relaxation layer (5) are formed on a semiconductor substrate (2). The light-absorbing layer (6), avalanche multiplication layer (4) and electric-field relaxation layer (5) exposed in the side wall of the mesa structure are protected by an SiN_x film or an SiO_yN_z film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer (5) is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer (5).