发明名称 |
Thin film transistor array panel and manufacturing method thereof |
摘要 |
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer. |
申请公布号 |
US2006172472(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20060395434 |
申请日期 |
2006.03.30 |
申请人 |
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发明人 |
LEE JEONG-YOUNG;YU SE-HWAM;JEON SANG-JIN;PARK MIN-WOOK |
分类号 |
G02F1/13;H01L29/04;G02F1/1339;G02F1/1362;G02F1/1368;G09F9/30;H01L21/28;H01L21/3205;H01L21/84;H01L23/52;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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