SOLID-STATE IMAGE PICKUP DEVICE USING CHARGED-COUPLED DEVICES AND METHOD FOR FABRICATING THE SAME

摘要

A solid-state image pickup device using charged coupled devices (CCD) and a method for fabricating the solid-state image pickup device are disclosed. The present invention can simplify and modify processes to increase yield, overcome imprecise light collection caused by diffuse reflection and prevent light from being incident on adjacent cells. The solid-state image pickup device using charged-coupled devices (CCD) includes an n-type impurity doped region and buried charged-coupled devices (BCCD) region formed on a surface of the semiconductor substrate. Especially, the solid-state image pickup device comprises: a first protective film formed on the n-type impurity doped region and the BCCD region; poly silicon electrodes prepared on the first protective film formed on the BCCD region; a second protective film coated on the poly silicon electrodes; a BPSG film stacked on the second protective film; a metal light shielding film covered on the BPSG film such that the n-type impurity doped region is opened; and a passivation film or planarizing film formed on the metal light shielding film.