| 摘要 |
A timing controller for a memory cell circuit provides separate sense amplifier timing signals and write circuit timing signals during respective read and write cycles of the memory cell circuit. Timing of word line read enable signals is different than timing of word line write enable signals, and is correlated with the sense amplifier timing and write circuit timing signals. Improved circuit performance is achieved by providing the separately generated timing signals for read operations and for write operations of the memory cell circuit.
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