发明名称 |
Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane |
摘要 |
A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.
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申请公布号 |
US2006170014(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20060393317 |
申请日期 |
2006.03.30 |
申请人 |
SMITH LOWELL S;MILLS DAVID M;FORTIN JEFFREY B;TIAN WEI-CHENG;LOGAN JOHN R |
发明人 |
SMITH LOWELL S.;MILLS DAVID M.;FORTIN JEFFREY B.;TIAN WEI-CHENG;LOGAN JOHN R. |
分类号 |
H01L21/00;H01L27/14;H01L29/82 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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