| 摘要 |
A method of manufacturing a thin film element is proposed, which can prevent the decrease in TFT manufacturing yield caused by the cracks occurring in an isolation layer at the time of the removing of an element formation substrate. A protection layer is formed between a plurality of TFTs, and an isolation layer is formed below the TFTs and the protection layer. This structure can prevent the TFTs from suffering adverse effects when the TFTs are temporarily bonded to an intermediate transfer substrate, and the element formation substrate and the isolation layer are removed.
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