FABRICATION METHOD FOR SEMICONDUCTOR TRANSISTOR HAVING RECESS CHANNEL REGION,申请号KR20050008682-传众专利搜索

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发明名称	FABRICATION METHOD FOR SEMICONDUCTOR TRANSISTOR HAVING RECESS CHANNEL REGION
摘要
申请公布号	KR20060087830(A)	申请公布日期	2006.08.03
申请号	KR20050008682	申请日期	2005.01.31
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LEE, JIN WON
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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