| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the dielectric constant of an insulating film layer for separating between transistors or between wiring without providing an air gap in the insulating film layer. <P>SOLUTION: At least a part of element isolation regions 4, an interlayer insulating film 10 and protective insulating films 8, 9 other than a gate insulating film (silicon oxide film) 5, are formed of a fluorocarbon (CFx, 0.3<x<0.6) or a hydrocarbon (CHy, 0.8<y<1.2). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
