发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device for forming a compact MOSFET having low ON resistance also when it is used for a large chip. <P>SOLUTION: The semiconductor device includes a resin package; at least two main leads that are integrated inside the resin package and compose a chip mounting section; a semiconductor chip mounted to the chip mounting section; and first and second surface leads connected to each electrode on the surface of the semiconductor chip. At least one of the main leads composes a discontinuous section inside the resin package. With this configuration, the discontinuous section relaxes thermal distortion and can maintain flat and precise lead frames without obstructing the flatness of the chip mounting section, thus facilitating packaging and improving reliability. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006203049(A) 申请公布日期 2006.08.03
申请号 JP20050014110 申请日期 2005.01.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UTSUNOMIYA SATORU;TAKANO YOSHIHIRO
分类号 H01L23/28 主分类号 H01L23/28
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