| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing agent which has high practicality as an object for shallow trench isolation and is capable of polishing without causing scratches, and a method for polishing a surface of a substrate to be polished with high practicality as an object for shallow trench isolation without causing scratches. <P>SOLUTION: The polishing agent comprises abrasive grains, an amino-acid surface active agent and water, and when using it, a ratio of silicon oxide film polishing speed to silicon nitride film polishing speed is 100 or above. In the method for polishing a substrate, a substrate on which a film to be polished is formed is pressed against a polishing cloth of a polishing plate, and then the polishing agent is supplied between the film to be polished and the polishing cloth while moving the substrate and the polishing plate to polish the film to be polished. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
